Inchange Semiconductor Product Specification 2SC5386 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(H)IS package ・High voltage;high speed ・Low collector saturation voltage APPLICATIONS ・Horizontal deflection output for high resolution display,color TV ・High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICM Collector current-Peak 16 A IB Base current 4 A PC Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC5386 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=6A; IB=1.5A 3.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.5A 1.5 V ICBO Collector cut-off current VCB=1500V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1A ; VCE=5V 15 35 hFE-2 DC current gain IC=6A ; VCE=5V 4.3 7.5 Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 105 pF Transition frequency IE=0.1A ; VCE=10V 1.7 MHz fT CONDITIONS MIN TYP. MAX 600 UNIT V Switching times ts tf Storage time Fall time ICP=5A;IB1(end)=1.0A fH =64kHz 2 2.5 3.5 μs 0.15 0.3 μs Inchange Semiconductor Product Specification 2SC5386 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification 2SC5386 Silicon NPN Power Transistors 4