ISC 2SD2148

Inchange Semiconductor
Product Specification
2SD2148
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3PML package
・High voltage ,high speed
・Low collector saturation voltage
APPLICATIONS
・High speed switching power supply
output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
8
A
ICM
Collector current-peak
16
A
IB
Base current
4
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD2148
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA , IB=0
700
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA , IC=0
5
V
VCE(sat)
Collector-emitter saturation voltage
IC=7A ;IB=1.4A
5.0
V
VBE(sat)
Base-emitter saturation voltage
IC=7A ;IB=1.4A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
8
hFE-2
DC current gain
IC=7A ; VCE=5V
4
2
MIN
TYP.
MAX
UNIT
Inchange Semiconductor
Product Specification
2SD2148
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions(unindicated tolerance:±0.10 mm)
3