Inchange Semiconductor Product Specification 2SC3235 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High voltage,high speed ·Low saturation voltage APPLICATIONS ·For high voltage ,high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 2 A ICM Collector current-Peak 4 A PC Collector power dissipation 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3235 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2 A 1.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.2 A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=0.1A ; VCE=5V 2 MIN 20 TYP. MAX 50 UNIT Inchange Semiconductor Product Specification 2SC3235 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3