Inchange Semiconductor Product Specification 2SD2586 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(H)IS package ・High voltage ,high speed ・Low saturation voltage ・Bult-in damper type APPLICATIONS ・Horizontal deflection output for color TV PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2.5 A PC Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD2586 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IC=300mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=3.5A; IB=0.8A VBEsat Base-emitter saturation voltage IC=3.5A; IB=0.8A ICBO Collector cut-off current VCB=1500V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=1A ; VCE=5V hFE-2 DC current gain IC=3.5A ; VCE=5V VF Diode forward voltage IF=5A 1.5 Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 73 pF Transition frequency IC=0.1A ; VCE=10V 2.5 MHz fT 5 UNIT V 5 V 1.5 V 1 mA 70 250 mA 8 28 4.4 8.5 0.9 2.0 V Switching times : ts Storage time 7.5 10 μs 0.3 0.6 μs ICP=3.5A;IB1=0.8A fH =15.75kHz tf Fall time 2 Inchange Semiconductor Product Specification 2SD2586 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification 2SD2586 Silicon NPN Power Transistors 4