ISC 2SD2586

Inchange Semiconductor
Product Specification
2SD2586
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3P(H)IS package
・High voltage ,high speed
・Low saturation voltage
・Bult-in damper type
APPLICATIONS
・Horizontal deflection output for color TV
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
5
A
ICM
Collector current-peak
10
A
IB
Base current
2.5
A
PC
Total power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD2586
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Emitter-base breakdown voltage
IC=300mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=3.5A; IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=3.5A; IB=0.8A
ICBO
Collector cut-off current
VCB=1500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=3.5A ; VCE=5V
VF
Diode forward voltage
IF=5A
1.5
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
73
pF
Transition frequency
IC=0.1A ; VCE=10V
2.5
MHz
fT
5
UNIT
V
5
V
1.5
V
1
mA
70
250
mA
8
28
4.4
8.5
0.9
2.0
V
Switching times :
ts
Storage time
7.5
10
μs
0.3
0.6
μs
ICP=3.5A;IB1=0.8A
fH =15.75kHz
tf
Fall time
2
Inchange Semiconductor
Product Specification
2SD2586
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
Inchange Semiconductor
Product Specification
2SD2586
Silicon NPN Power Transistors
4