Inchange Semiconductor Product Specification BD809 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD810 ・DC current gain : hFE = 30 (Min) @ IC = 2.0 Adc APPLICATIONS ・Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A IB Base current 6 A PD Total power dissipation 90 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 1.39 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BD809 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 VCEsat Collector-emitter saturation voltage IC=3 A;IB=0.3 A 1.1 V VBE Base-emitter voltage IC=4A ; VCE=2V 1.6 V ICBO Collector cut-off current VCB=80V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 2.0 mA hFE-1 DC current gain IC=2A ; VCE=2V 30 hFE-2 DC current gain IC=4A ; VCE=2V 15 Transition frequency IC=1A ; VCE=10V;f=1.0MHz 1.5 fT CONDITIONS 2 MIN TYP. MAX 80 UNIT V MHz Inchange Semiconductor Product Specification BD809 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3