ISC BD809

Inchange Semiconductor
Product Specification
BD809
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type BD810
・DC current gain
: hFE = 30 (Min) @ IC = 2.0 Adc
APPLICATIONS
・Designed for use in high power audio
amplifiers utilizing complementary or
quasi complementary circuits.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
80
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
10
A
IB
Base current
6
A
PD
Total power dissipation
90
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
1.39
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
BD809
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0
VCEsat
Collector-emitter saturation voltage
IC=3 A;IB=0.3 A
1.1
V
VBE
Base-emitter voltage
IC=4A ; VCE=2V
1.6
V
ICBO
Collector cut-off current
VCB=80V; IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
2.0
mA
hFE-1
DC current gain
IC=2A ; VCE=2V
30
hFE-2
DC current gain
IC=4A ; VCE=2V
15
Transition frequency
IC=1A ; VCE=10V;f=1.0MHz
1.5
fT
CONDITIONS
2
MIN
TYP.
MAX
80
UNIT
V
MHz
Inchange Semiconductor
Product Specification
BD809
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3