SavantIC Semiconductor Product Specification MJE15033 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type MJE15032 ·High transition frequency ·DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC =- 0.5 Adc hFE = 10 (Min) @ IC = -2.0 Adc APPLICATIONS ·Designed for use as high–frequency drivers in audio amplifiers. PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -250 V VCEO Collector-emitter voltage Open base -250 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -8 A ICM Collector current-Peak -16 A IB Base current -2 A PD Total power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~150 Ta=25 2 TC=25 50 W THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance ; junction to case 2.5 /W Rth j-A Thermal resistance , junction to ambient 62.5 /W SavantIC Semiconductor Product Specification MJE15033 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=-10mA ;IB=0 VCE(sat) Collector-emitter saturation voltage IC=-1A ;IB=-0.1A -0.5 V VBE Base-emitter on voltage IC=-1A ; VCE=-5V -1.0 V ICBO Collector cut-off current VCB=-150V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 µA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 50 hFE-2 DC current gain IC=-1A ; VCE=-5V 50 hFE-3 DC current gain IC=-2A ; VCE=-5V 10 Transition frequency IC=-0.5A;VCE=-10V;f=1.0MHz 30 fT CONDITIONS 2 MIN TYP. MAX -250 UNIT V MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3 MJE15033