Inchange Semiconductor Product Specification MJE15030 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type MJE15031 ・High transition frequency ・DC current gain specified to 4.0 amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc APPLICATIONS ・Designed for use as high–frequency drivers in audio amplifiers. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 8 A ICM Collector current-Peak 16 A IB Base current 2 A PD Total power dissipation Ta=25℃ 2 TC=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C Thermal resistance ; junction to case 2.5 ℃/W Rth j-A Thermal resistance , junction to ambient 62.5 ℃/W Inchange Semiconductor Product Specification MJE15030 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=1A ;IB=0.1A 0.5 V VBE Base-emitter on voltage IC=1A ; VCE=2V 1.0 V ICBO Collector cut-off current VCB=150V; IE=0 10 μA ICEO Collector cut-off current VCE=150V; IB=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.1A ; VCE=2V 40 hFE-2 DC current gain IC=2A ; VCE=2V 40 hFE-3 DC current gain IC=3A ; VCE=2V 40 hFE-4 DC current gain IC=4A ; VCE=2V 20 Transition frequency IC=0.5A;VCE=10V;f=10MHz 30 fT 2 150 UNIT V MHz Inchange Semiconductor Product Specification MJE15030 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3 Inchange Semiconductor Product Specification MJE15030 Silicon NPN Power Transistors 4