ISC BDX18

Inchange Semiconductor
Product Specification
BDX18
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・High switching speed
APPLICATIONS
・LF large signal power amplification
・Suitable for series and shunt regulators, high
fidelity amplifiers and power switching circuits
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-15
A
IB
Base current
-7
A
PT
Total power dissipation
117
W
Tj
Junction temperature
-65~200
℃
Tstg
Storage temperature
-65~200
℃
MAX
UNIT
1.5
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
BDX18
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-0.2A ; IB=0
-60
V
V(BR) EBO
Emitter-base breakdown voltage
IE=-1mA ; IC=0
-7
V
Collector-emitter saturation voltage
IC=-4A ;IB=-0.4A
-1.1
V
VBE
Base-emitter voltage
IC=-4A;VCE=-4V
-1.8
V
ICEX
Collector cut-off current
VCE=-90V;VBE=1.5V
VCE=-60V;VBE=1.5V;TC=150℃
-5
-10
mA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-5
mA
hFE
DC current gain
IC=-4A ; VCE=-4V
Transition frequency
IC=-1A ; VCE=-10V;f=1MHz
VCEsat
fT
CONDITIONS
2
MIN
TYP.
20
MAX
UNIT
70
4
MHz
Inchange Semiconductor
Product Specification
BDX18
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3