ISC BDY58

Inchange Semiconductor
Product Specification
BDY57 BDY58
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High current capability
・Fast switching speed
APPLICATIONS
・For use in low frequency large
signal power amplifications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
BDY57
VCBO
Collector-base voltage
80
Open base
BDY58
VEBO
Emitter-base voltage
V
160
BDY57
Collector-emitter voltage
UNIT
120
Open emitter
BDY58
VCEO
VALUE
V
125
Open collector
10
V
IC
Collector current
25
A
IB
Base current
6
A
PT
Total power dissipation
175
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
MAX
UNIT
1.0
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
BDY57 BDY58
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDY57
VCEO(SUS)
V(BR)CBO
Collector-emitter
sustaining voltage
MIN
TYP.
MAX
80
IC=0.1A ; IB=0
V
BDY58
125
BDY57
120
Collector-emitter
breakdown voltage
UNIT
IC=5mA ; IE=0
BDY58
V
160
VCEsat
Collector-emitter saturation voltage
IC=10A ;IB=1A
1.4
V
VBEsat
Base-emitter saturation voltage
IC=10A ;IB=1A
1.4
V
ICBO
Collector cut-off current
VCB=100V; IE=0
0.5
mA
ICER
Collector cut-off current
VCE=80V; RBE=10Ω;TC=100℃
10
mA
IEBO
Emitter cut-off current
VEB=10V; IC=0
0.5
mA
hFE-1
DC current gain
IC=10A ; VCE=4V
hFE-2
DC current gain
IC=20A ; VCE=4V
fT
Transition frequency
IC=1A ; VCE=15V,f=10MHz
ton
Turn-on time
IC=15A ;IB=1.5A
2
20
60
15
10
MHz
1.0
μs
Inchange Semiconductor
Product Specification
BDY57 BDY58
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3