Inchange Semiconductor Product Specification 2SC1504 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=2A ·Power dissipation -PD=40W @TC=25℃ APPLICATIONS ·High speed switching and linear amplification ·Switching regulators ,converters PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 400 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 2 A ICM Collector current-Peak 5 A IB Base current 1 A PT Total power dissipation 40 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 5.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2SC1504 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 1.0 V VBEsat Base-emitter saturation voltage IC=1A ;IB=0.1A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=4V Transition frequency IC=0.1A ; VCE=10V fT CONDITIONS 2 MIN TYP. MAX UNIT 20 10 MHz Inchange Semiconductor Product Specification 2SC1504 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3