Inchange Semiconductor Product Specification 2N3585 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=2A ·Power dissipation -PD=35W @TC=25℃ ·VCE(SAT)=0.75V(Max)@IC=1A;IB=0.125A APPLICATIONS ·High speed switching and linear amplification ·High-voltage operational amplifiers ·Switching regulators ,converters ·Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 2 A ICM Collector current-Peak 5 A IB Base current 1 A PT Total power dissipation 35 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 5.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N3585 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.125A 0.75 V VBEsat Base-emitter saturation voltage IC=1A ;IB=0.1A 1.4 V VBE Base -emitter on voltage IC=1A ; VCE=10V 1.4 V ICEX Collector cut-off current VCE=450V;VBE(off)=1.5V VCE=300V;VBE(off)=1.5V TC=150℃ 1.0 3.0 mA ICEO Collector cut-off current VCE=150V; IB=0 5.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.5 mA hFE-1 DC current gain IC=0.1A ; VCE=10V 40 hFE-2 DC current gain IC=1A ; VCE=2V 8 80 hFE-3 DC current gain IC=1A ; VCE=10V 25 100 2 MIN TYP. MAX 300 UNIT V Inchange Semiconductor Product Specification 2N3585 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2N3585 Silicon NPN Power Transistors 4