ISC 2N3585

Inchange Semiconductor
Product Specification
2N3585
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·Continuous collector current-IC=2A
·Power dissipation -PD=35W @TC=25℃
·VCE(SAT)=0.75V(Max)@IC=1A;IB=0.125A
APPLICATIONS
·High speed switching and linear amplification
·High-voltage operational amplifiers
·Switching regulators ,converters
·Deflection stages and high fidelity amplifers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
2
A
ICM
Collector current-Peak
5
A
IB
Base current
1
A
PT
Total power dissipation
35
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
MAX
UNIT
5.0
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N3585
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=1A; IB=0.125A
0.75
V
VBEsat
Base-emitter saturation voltage
IC=1A ;IB=0.1A
1.4
V
VBE
Base -emitter on voltage
IC=1A ; VCE=10V
1.4
V
ICEX
Collector cut-off current
VCE=450V;VBE(off)=1.5V
VCE=300V;VBE(off)=1.5V TC=150℃
1.0
3.0
mA
ICEO
Collector cut-off current
VCE=150V; IB=0
5.0
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.5
mA
hFE-1
DC current gain
IC=0.1A ; VCE=10V
40
hFE-2
DC current gain
IC=1A ; VCE=2V
8
80
hFE-3
DC current gain
IC=1A ; VCE=10V
25
100
2
MIN
TYP.
MAX
300
UNIT
V
Inchange Semiconductor
Product Specification
2N3585
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2N3585
Silicon NPN Power Transistors
4