Inchange Semiconductor Product Specification BU133 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・Intended for operating in color TV receiver’s chopper supplies PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 750 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 7 V 3 A 30 W IC Collector current PT Total power dissipation Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 2.33 ℃/W TC=50℃ THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base Inchange Semiconductor Product Specification BU133 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 250 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.5A 1.5 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.5A 1.4 V ICBO Collector cut-off current VCB=750V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V Transition frequency IC=0.2A ; VCE=10V fT CONDITIONS 2 MIN TYP. 15 MAX UNIT 80 8 MHz Inchange Semiconductor Product Specification BU133 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3