Inchange Semiconductor Product Specification 2SC3223 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High speed,high current ·Low saturation voltage APPLICATIONS ·For high current high speed,high power applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 230 V VCEO Collector-emitter voltage Open base 230 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 20 A IB Base current 7 A PT Total power dissipation 200 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.62 ℃/W Tmb=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base Inchange Semiconductor Product Specification 2SC3223 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 VCE(sat) Collector-emitter saturation voltage IC=10A; IB=1A 1.0 V VBE(sat) Base-emitter saturation voltage IC=10A; IB=1A 1.5 V ICBO Collector cut-off current At rated voltage 0.1 mA ICEO Collector cut-off current At rated voltage 0.1 mA IEBO Emitter cut-off current At rated voltage 0.1 mA hFE DC current gain IC=20A ; VCE=2V Transition frequency IC=2A ; VCE=10V fT 2 230 UNIT V 10 20 MHz Inchange Semiconductor Product Specification 2SC3223 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3