Inchange Semiconductor Product Specification BU1508DF Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current 8 A ICM Collector current (peak) 15 A IB Base current 4 A IBM Base current (peak) 6 A PT Total power dissipation 35 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BU1508DF Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 13.5 MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0;L=25mH 700 VCEsat Collector-emitter saturation voltage IC=4.5A; IB=1.1A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A; IB=1.7A 1.1 V ICES Collector cut-off current VCE=rated;VBE=0 Tj=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 180 mA hFE-1 DC current gain IC=0.1A ; VCE=5V hFE-2 DC current gain IC=4.5A ; VCE=1V Collector output capacitance IE=0;f=1MHz;VCB=10V CC 2 V V 90 13 4.0 5.5 80 7.0 pF Inchange Semiconductor Product Specification BU1508DF Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3