ISC BU1508DF

Inchange Semiconductor
Product Specification
BU1508DF
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·High voltage,high speed
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
7.5
V
IC
Collector current
8
A
ICM
Collector current (peak)
15
A
IB
Base current
4
A
IBM
Base current (peak)
6
A
PT
Total power dissipation
35
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
BU1508DF
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
13.5
MAX
UNIT
V(BR)EBO
Emitter-base breakdown voltage
IE=600mA ;IC=0
7.5
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0;L=25mH
700
VCEsat
Collector-emitter saturation voltage
IC=4.5A; IB=1.1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=4.5A; IB=1.7A
1.1
V
ICES
Collector cut-off current
VCE=rated;VBE=0
Tj=125℃
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=7.5V; IC=0
180
mA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=4.5A ; VCE=1V
Collector output capacitance
IE=0;f=1MHz;VCB=10V
CC
2
V
V
90
13
4.0
5.5
80
7.0
pF
Inchange Semiconductor
Product Specification
BU1508DF
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3