Inchange Semiconductor Product Specification BU2520A Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current (DC) 10 A ICM Collector current (Pulse) 25 A IB Base current 6 A IBM Base current(peak) 9 A PC Collector power dissipation 125 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BU2520A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter breakdown voltage IC=100mA; IB=0;L=25mH 700 V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 1.3 V ICES Collector cut-off current VCE=rated; VBE=0 T=125°C 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 1.0 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 6 13 26 hFE-2 DC current gain IC=6A ; VCE=5V 5 7 10 Collector capacitance IE=0 VCB=10V;f=1MHz CC CONDITIONS 2 MIN TYP. MAX UNIT V 13.5 115 V pF Inchange Semiconductor Product Specification BU2520A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3