Inchange Semiconductor Product Specification BU2720DF Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching ・Built-in damper diode APPLICATIONS ・For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1700 V VCEO Collector-emitter voltage Open base 825 V IC Collector current (DC) 10 A ICM Collector current -peak 25 A IB Base Collector current (DC) 10 A IBM Base current -peak 14 A Ptot Total power dissipation 45 W TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification BU2720DF Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 825 V V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 V VCEsat Collector-emitter saturation voltage IC=5.5A ;IB=1.38 A 1.0 V VBEsat Base-emitter saturation voltage IC=5.5A ;IB=1.38 A 1.0 V ICES Collector cut-off current VCE=BVCES; VBE=0 Tj=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 300 mA hFE-1 DC current gain IC=0.1A ; VCE=5V hFE-2 DC current gain IC=5.5A ; VCE=1V 2 MIN TYP. 100 MAX 22 4 5.5 7.5 UNIT Inchange Semiconductor Product Specification BU2720DF Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3