isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU207 DESCRIPTION ·High Voltage-VCEX= 1300V(Min.) ·Collector Current- IC = 5.0A APPLICATIONS ·Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5.0 A ICM Collector Current-Peak 7.5 A IB Base Current-Continuous 2.5 A PC Collector Power Dissipation @TC=25℃ 55 W TJ Junction Temperature 115 ℃ Tstg Storage Temperature -65~115 ℃ MAX UNIT 1.64 ℃/W B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU207 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.5 V ICES Collector Cutoff Current VCE= 1300V; VBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5.0V; IC= 0 10 mA hFE DC Current Gain IC= 4.5A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz fT Current-Gain—Bandwidth Product tf Fall Time isc Website：www.iscsemi.cn CONDITIONS MIN TYP. MAX 600 UNIT V 2.25 125 pF IC= 0.1A; VCE= 5V; ftest= 1MHz 4 MHz IC= 4.5A; IB= 1.8A; LB= 10μH 1.0 μs 2