isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU208D DESCRIPTION ·High Voltage-VCES= 1500V(Min.) ·Collector Current- IC = 8.0A ·Built-in Damper Diode APPLICATIONS ·Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 8.0 A ICM Collector Current-Peak 15 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -65~175 ℃ MAX UNIT 1.0 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU208D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.3 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC= 125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 5.0V; IC= 0 300 mA hFE DC Current Gain IC= 1A; VCE= 5V Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V; ftest= 5MHz C-E Diode Forward Voltage IF= 4A fT VECF CONDITIONS MIN TYP. MAX 700 UNIT V 8 7 MHz 2 V Switching Times( Inductive load) ts Storage Time 7 μs 0.55 μs IC= 4.5A; IB= 1.8A; LB= 3μH; VCC= 140V, LC= 0.9mH tf Fall Time isc Website：www.iscsemi.cn 2