isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU505D DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 700V(Min.) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage-VBE=0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V 2.5 A IC Collector Current-Continuous ICM Collector Current-Peak 4 A IB Base Current-Continuous 2 A IBM Base Current-Peak 4 A PC Collector Power Dissipation @ TC=25℃ 75 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.67 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU505D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.9A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.9A 1.3 V ICES Collector Cutoff Current VCE= VCESmax; VBE= 0 VCE= VCESmax; VBE= 0;TJ= 125℃ 0.15 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE DC Current Gain IC= 0.1A; VCE= 5V Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V VECF C-E Diode Forward Voltage IF= 2A COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz fT CONDITIONS MIN TYP. MAX 700 UNIT V B B 6 30 7 MHz 1.8 V 65 pF 9.5 μs 0.85 μs Switching Times; Resistive load tstg Storage Time IC= 2A , IB(end)= 0.9A;Vdr= -4V LB= 25μH tf Fall Time isc Website：www.iscsemi.cn 2