ISC BU2520AX

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU2520AX
DESCRIPTION
·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min)
·High Switching Speed
APPLICATIONS
·Designed for use in horizontal deflection circuits of
large screen color TV receivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0)
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7.5
V
IC
Collector Current- Continuous
10
A
ICM
Collector Current-Peak
25
A
IB
Base Current- Continuous
6
A
IBM
Base Current-Peak
9
A
PC
Collector Power Dissipation
@ TC=25℃
45
W
TJ
Junction Temperature
150
℃
-55~150
℃
B
Tstg
Storage Temperature Range
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.8
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU2520AX
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA ; IB= 0,L= 25mH
800
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7.5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
1.1
V
ICES
Collector Cutoff Current
VCE= 1500V ; VBE= 0
VCE= 1500V ; VBE= 0; TC=125℃
1.0
2.0
mA
IEBO
Emitter Cutoff Current
VEB= 7.5V ; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 0.1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 6A ; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
B
B
13
5
9.5
115
pF
Switching times
tstg
tf
Storage Time
5.5
μs
0.5
μs
IC= 6A , IB(end)= 1.0A; LB= 5.3μH
-VBB= 4V; (-dIB/dt= 0.8A/μs)
Fall Time
isc Website:www.iscsemi.cn
2
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Website:www.iscsemi.cn
isc Product Specification
BU2520AX