isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2522DF DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current-Continuous 10 A ICM Collector Current-peak 25 A IB Base Current-Continuous 6 A IBM Base Current-peak 9 A PC Collector Power Dissipation @TC=25℃ 45 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.8 K/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2522DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH 800 V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA ;IC= 0 7.5 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A ;IB= 1.2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A ;IB= 1.2A 1.3 V ICES Collector Cutoff Current VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0;TC=125℃ 0.25 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V; IC= 0 300 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 6A ; VCE= 5V VECF C-E Diode Forward Voltage IF= 6A COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1MHz isc Website：www.iscsemi.cn CONDITIONS MIN TYP. MAX UNIT V 13.5 100 V 10 5 8 2.0 115 V pF