isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2532AL DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 16 A ICM Collector Current-Peak 40 A IB Base Current- Continuous 10 A IBM Base Current-Peak 15 A PC Collector Power Dissipation @ TC=25℃ 125 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2532AL ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.17A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.17A 1.0 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 7A; VCE= 5V B B MAX UNIT 17 6 12.5 Switching times tstg tf Storage Time Fall Time isc Website：www.iscsemi.cn IC= 7A , IB(end)= 1A; LC= 100μH; VCC= 138V; Cfb= 3nF 2 1.8 μs 0.1 μs