Inchange Semiconductor Product Specification BU2522AF Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V IC Collector current (DC) 10 A ICM Collector current-peak 25 A IB Base Collector current (DC) 6 A IBM Base current-peak 9 A Ptot Total power dissipation 45 W 150 ℃ -65~150 ℃ Tj Tstg Max.operating junction temperature Storage temperature TC=25℃ Inchange Semiconductor Product Specification BU2522AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter breakdown voltage IC=0.1A ;IB=0;L=25mH 800 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=6.0A ;IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=6.0A ;IB=1.2A 1.3 V ICES Collector cut-off current VCE=BVCES; VBE=0 Tj=125℃ 0.25 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 0.25 mA hFE-1 DC current gain IC=1A ; VCE=5V hFE-2 DC current gain IC=6A ; VCE=5V Collector capacitance IE=0 ; VCB=10V; f=1MHz CC CONDITIONS 2 MIN TYP. MAX UNIT V 13.5 V 10 5 7 115 8 pF Inchange Semiconductor Product Specification BU2522AF Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3