Inchange Semiconductor Product Specification BU2522A Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=25℃) 固 SYMBOL D N O IC VALUE UNIT 1500 V 800 V 10 A Collector current-peak 25 A IB Base current (DC) 6 A IBM Base current-peak 9 A Ptot Total power dissipation 125 W VCBO VCEO IC ICM PARAMETER M E S GE Collector-base voltage N A H INC Collector-emitter voltage Collector current (DC) CONDITIONS Open emitter Open base TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification BU2522A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.76A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.76A 1.3 V ICES Collector cut-off current VCE=BVCES; VBE=0 Tj=125℃ 0.25 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 0.25 mA hFE-1 DC current gain hFE-2 CC 导体 半 电 CONDITIONS 固 IC=1A ; VCE=5V DC current gain M E S E VCB=10V;IE=0;f=1.0MHz G N A CH IN 8 2 TYP. MAX UNIT V 13.5 V 10 21 7 8 R O T UC D N O IC IC=6A ; VCE=5V Collector capacitance MIN 5 115 pF Inchange Semiconductor Product Specification BU2522A Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3