SavantIC Semiconductor Product Specification BU2522A Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V IC Collector current (DC) 10 A ICM Collector current-peak 25 A IB Base current (DC) 6 A IBM Base current-peak 9 A Ptot Total power dissipation 125 W TC=25 Tj Junction temperature 150 Tstg Storage temperature -65~150 SavantIC Semiconductor Product Specification BU2522A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.76A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.76A 1.3 V ICES Collector cut-off current VCE=BVCES; VBE=0 Tj=125 0.25 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 0.25 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 10 21 hFE-2 DC current gain IC=6A ; VCE=5V 5 7 8 Collector capacitance VCB=10V;IE=0;f=1.0MHz CC CONDITIONS 2 MIN TYP. MAX UNIT V 13.5 115 V pF SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 BU2522A