Inchange Semiconductor Product Specification BU508AF Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current (DC) 8 A ICP Collector current (Pulse) 15 A IB Base current (DC) 4 A IBM Base current (Pulse) 6 A Ptot Total power dissipation 34 W TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification BU508AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 700 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=4.5A; IB=1.6A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2A 1.1 V ICES Collector cut-off current VCE=RatedVCE; VBE=0 TC=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 10 mA hFE DC current gain IC=0.1A ; VCE=5V fT Transition frequency IC=0.1A ; VCE=5V COB Output capacitance IE=0 ; VCB=10V;f=1MHz 2 MIN TYP. MAX UNIT V 13.5 6 V 30 7 MHz 125 pF Inchange Semiconductor Product Specification BU508AF Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3