SavantIC Semiconductor Product Specification BU2527AX Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current (DC) 12 A ICM Collector current -peak 30 A IB Base current (DC) 8 A IBM Base current -peak 12 A Ptot Total power dissipation 45 W TC=25 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification BU2527AX Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A 1.3 V ICES Collector cut-off current VCE=BVCES; VBE=0 Tj=125 0.25 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 0.25 mA hFE-1 DC current gain IC=1A ; VCE=5V 6 10 21 hFE-2 DC current gain IC=6A ; VCE=5V 5 7 9 Collector capacitance IE=0 ; VCB=10V;f=1MHz CC CONDITIONS 2 MIN TYP. MAX UNIT V 13.5 145 V pF SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BU2527AX