Inchange Semiconductor Product Specification BU2527AF Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current (DC) 12 A ICM Collector current-peak 30 A IB Base current (DC) 8 A IBM Base current-peak 12 A Ptot Total power dissipation 45 W TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification BU2527AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A 1.3 V ICES Collector cut-off current VCE=BVCES; VBE=0 Tj=125℃ 0.25 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 0.25 mA hFE-1 DC current gain IC=1A ; VCE=5V hFE-2 DC current gain IC=6A ; VCE=5V Collector capacitance VCB=10V;IE=0; f=1.0MHz CC CONDITIONS 2 MIN TYP. MAX UNIT 10 5 9 145 pF Inchange Semiconductor Product Specification BU2527AF Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3