Inchange Semiconductor Product Specification BU2525AW Silicon NPN Power Transistors DESCRIPTION ・With TO-247 package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V IC Collector current (DC) 12 A ICM Collector current -peak 30 A IB Base Collector current (DC) 8 A IBM Base current -peak 12 A Ptot Total power dissipation 125 W TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification BU2525AW Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=8A ;IB=1.6 A 5.0 V VBEsat Base-emitter saturation voltage IC=8A ;IB=1.6 A 1.3 V ICES Collector cut-off current VCE=BVCES; VBE=0 Tj=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 1.0 mA hFE-1 DC current gain IC=0.1A ; VCE=5V hFE-2 DC current gain IC=8A ; VCE=5V Collector capacitance IE=0; f=1MHz;VCB=10V CC CONDITIONS 2 MIN TYP. MAX UNIT V 13.5 V 13 5 7 145 9.5 pF Inchange Semiconductor Product Specification BU2525AW Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3