isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU4530AL DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV rceivers and PC monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT 1500 V 800 V 7.5 V s c s i . w w w IC Collector Current-Continuous 16 A ICM Collector Current-Peak 40 A IB Base Current-Continuous 10 A IBM Base Current-Peak 15 A PC Collector Power Dissipation @TC=25℃ 125 W Tj Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU4530AL ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0; L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A ;IB= 2.22A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A ;IB= 2.22A 1.01 V ICES Collector Cutoff Current VCEV=1500V,VBE(off)=0 VCEV=1500V,VBE(off)=0;TC=125℃ 1.0 2.0 mA hFE-1 DC Current Gain hFE-2 DC Current Gain IC= 10A ; VCE= 5V w. tf w w Storage Time Fall Time n c . i m e s c is IC= 1A ; VCE= 5V Switching times; Resistive load ts MIN isc Website：www.iscsemi.cn 4.8 TYP. MAX UNIT 12 8.5 4.0 μs 0.26 μs IC= 9A; IB1= 1.8A; IB2= -4.5A