SavantIC Semiconductor Product Specification BU2722AF Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1700 V VCEO Collector-emitter voltage Open base 825 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current (DC) 10 A ICM Collector current-peak 25 A IB Base current (DC) 10 A IBM Base current-peak 14 A PT Total power dissipation 45 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification BU2722AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 825 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=1.0A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=1.0A 1.0 V ICES Collector cut-off current VCE=BVCES; VBE=0 Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 1.0 mA hFE-1 DC current gain IC=0.1A ; VCE=5V hFE-2 DC current gain IC=4.5A ; VCE=1V 2 MIN TYP. MAX V 13.5 V 22 4.5 UNIT 10 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 BU2722AF