SAVANTIC BU2527AF

SavantIC Semiconductor
Product Specification
BU2527AF
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PFa package
·High voltage
·High speed switching
APPLICATIONS
·For use in horizontal deflection circuits
of high resolution monitors
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7.5
V
IC
Collector current (DC)
12
A
ICM
Collector current-peak
30
A
IB
Base current (DC)
8
A
IBM
Base current-peak
12
A
Ptot
Total power dissipation
45
W
TC=25
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
SavantIC Semiconductor
Product Specification
BU2527AF
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
800
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7.5
V
VCEsat
Collector-emitter saturation voltage
IC=6A ;IB=1.2A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=6A ;IB=1.2A
1.3
V
ICES
Collector cut-off current
VCE=BVCES; VBE=0
Tj=125
0.25
2.0
mA
IEBO
Emitter cut-off current
VEB=7.5V; IC=0
0.25
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
Collector capacitance
VCB=10V;IE=0; f=1.0MHz
CC
CONDITIONS
2
MIN
TYP.
MAX
UNIT
10
5
9
145
pF
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
BU2527AF