isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU706DF DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 700V(Min) ·High Switching Speed ·Built-in Integrated Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage VBE=0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 3 A IBM Base Current-Peak 5 A PC Collector Power Dissipation @ TC=25℃ 32 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 3.95 ℃/W 35 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU706DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;IB= 0; L=25 mH VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1.33A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1.33A 1.3 V ICES Collector Cutoff Current VCE= VCESmax;VBE= 0 VCE= VCESmax;VBE= 0; TJ= 125℃ 0.5 1.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 10 mA hFE DC Current Gain IC= 3A; VCE= 5V VECF C-E Diode Forward Voltage IF= 3A 2.2 V IS/B Second Breakdown Current VCE= 300V; tp= 200μs B 700 UNIT V B B 2.25 1.5 1.0 A Switching Times tf Fall Time 0.7 μs 6.5 μs IC= 3A; IB(end)= 1A; LB= 12μH ts Storage Time isc Website：www.iscsemi.cn 2