isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU1507DX DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 700V(Min.) ·High Speed Switching ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and computer monitors. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCESM Collector-Emitter Voltage VBE= 0 VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage UNIT 1500 V 700 V 7.5 V 8 A 15 A IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous 4 A IBM Base Current-peak 6 A PC Collector Power Dissipation @TC=25℃ 35 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.7 ℃/W isc Website：www.iscsemi.cn n c . i m e s c s .i ww w VALUE isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU1507DX ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 25mH 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.1 V ICES Collector Cutoff Current VCE= VCESM; VBE= 0 VCE= VCESM; VBE= 0; TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain VECF C-E Diode Forward Voltage COB Collector Output Capacitance m e s isc Switching Times Resistive Load ts Storage Time tf Fall Time TYP. B B IC= 1A; VCE= 5V w. w w MIN IC= 4A; VCE= 5V IF= 4A n c . i IE= 0; VCB= 10V; f= 1MHz MAX 160 mA 14 5 9 2.0 68 V pF 6.0 μs 0.5 μs IC= 4A; IB(end)= 0.7A; LB= 6μH; -VBB= 4V isc Website：www.iscsemi.cn UNIT