isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU4508DF DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation @ TC=25℃ 45 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.8 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU4508DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A 1.03 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃ 1.0 2.0 mA hFE-1 DC Current Gain IC= 0.5A; VCE= 5V hFE-2 DC Current Gain IC= 5A; VCE= 5V VECF C-E Diode Forward Voltage IF= 5A 7 4.2 7.3 2.2 V 3.75 μs 0.4 μs Switching times tstg Storage Time IC= 5A, IB1= 1.0A; IB2= -2.5A tf Fall Time isc Website：www.iscsemi.cn 2