isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU426A DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min) ·High Switching Speed APPLICATIONS ·Designed for switch-mode CTV supply systems applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCES Collector-Emitter Voltage VBE= 0 900 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2 A IBM Base Current-Peak 3 A PC Collector Power Dissipation @ TC=25℃ 70 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.1 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU426A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;IB= 0; L= 25mH 400 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1.25A 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.4 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 1.25A 1.6 V ICES Collector Cutoff Current VCE= 900V; VBE= 0 VCE= 900V; VBE= 0;TJ=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 10V; IC=0 10 mA hFE DC Current Gain IC= 0.6A ; VCE= 5V B TYP. MAX UNIT V B B 15 60 Switching Times ton Turn-On Time tstg Storage Time tf IC= 2.5A; IB1= 0.5A; IB2= -1A; VCC= 250V Fall Time isc Website：www.iscsemi.cn 0.15 2 0.6 μs 3.5 μs μs