isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV47AFI DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V(Min.) ·Collector-Emitter Saturation Voltage:VCE(sat)= 1.5V(Max.)@IC= 5A ·High Speed Switching APPLICATIONS ·Designed for 220V switchmode power supply, DC and AC motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCER Collector-Emitter Voltage RBE= 10Ω VCES Collector-Emitter Voltage VBE= 0 VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage UNIT 1000 V 1000 V 450 V 7 V s c s i . w w w IC Collector Current-Continuous 9 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 8 A IBM Base Current-Peak 10 A PC Collector Power Dissipation @TC=25℃ 55 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg n c . i m e VALUE Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.27 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV47AFI ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A 3.0 V Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.6 V ICER Collector Cutoff Current VCE= 850V; RBE=10Ω VCE= 850V; RBE=10Ω;TC=125℃ 0.4 3.0 mA ICEV Collector Cutoff Current VCE= 850V; VBE=-2.5V VCE= 850V; VBE=-2.5V;Tj= 125℃ 0.15 1.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA 0.7 μs 3.0 μs 0.8 μs VBE(sat) w Turn-on Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn MIN UNIT 7 V B n c . i IC= 5A; IB1= -IB2= 1A; VCC= 150V MAX V B m e s isc TYP. 450 B . w w Switching Times, Resistive Load ton CONDITIONS