isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW87 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 150V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators and switching control amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCES Collector-Emitter Voltage VBE=0 300 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 2 A IBM Base Current-Peak 3 A IE Emitter Current-Continuous 11 A IEM Emitter Current-Peak 15 A PC Collector Power Dissipation @ TC=25℃ 62.5 W TJ Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 2.8 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW87 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;IB= 0; L=25 mH VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 0.65 V Base-Emitter Saturation Voltage IC= 7A; IB= 0.7A 1.6 V ICES Collector Cutoff Current VCE= VCBO;VBE= 0 VCE= VCBO;VBE= 0; TJ= 150℃ 1 2 mA hFE DC Current Gain IC= 4A; VCE= 5V Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 5V;ftest= 5MHz VBE(sat) fT B 150 UNIT V B B B 20 50 MHz Switching Times; Resistive Load ton Turn-On Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 7A; IB1= -IB2= 0.7A;VCC=75V 2 0.25 0.4 μs 0.7 1.3 μs 0.15 0.3 μs