isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ12005 DESCRIPTION · Collector-Emitter VoltageVCEX = 1500V ·Safe Operation Area APPLICATIONS ·Designed for use in deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 1500 V VCEX Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB Base Current-Continuous 4 A IE Emitter Current-Continuous 12 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ12005 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC=5A; IB=1A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC=5A; IB=1A 1.5 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 0．25 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 0．1 mA hFE DC Current Gain IC= 0.5A ; VCE= 5V 12 Fall Time IC=5A , IB1=1A; LB=8μH 0.4 1.0 μs tf isc Website：www.iscsemi.cn CONDITIONS B 2 MIN TYP. MAX 750 UNIT V