isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5427 DESCRIPTION ·Contunuous Collector Current-IC= 7A ·Low Collector-Emitter Saturation Voltage: VCE(sat)= 1.2V(Max) @IC= 7A ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A IB Base Current-Continuous 1 A PC Collector Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ MAX UNIT 4.37 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5427 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 0.7 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A 1.2 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 7A; IB= 0.7A 2.0 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 0.1 mA ICEX Collector Cutoff Current VCE= 75V; VBE(off)= -1.5V VCE= 75V; VBE(off)= -1.5V,TC=150℃ 0.1 1.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 0.5A ; VCE= 2V 30 hFE-2 DC Current Gain IC= 2A; VCE= 2V 30 hFE-3 DC Current Gain IC= 5A; VCE= 2V 20 Current Gain-Bandwidth Product IC= 0.5A; VCE= 10V; f=10MHz 20 fT isc Website：www.iscsemi.cn CONDITIONS 2 MIN MAX 80 UNIT V 120 MHz