ISC MJE13002

Inchange Semiconductor
Product Specification
MJE13002
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-126 package
・High voltage ,high speed
APPLICATIONS
・Particularly suited for 115V and 220V
switchmode applications such as switching
regulators,inverters ,motor controls,solenoid/
relay drivers and deflection circuits.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
600
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
9
V
IC
Collector current (DC)
1.5
A
ICM
Collector current-Peak
3
A
IB
Base current
0.75
A
IBM
Base current-Peak
1.5
A
IE
Emitter current
2.25
A
IEM
Emitter current-Peak
4.5
A
PD
Total power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
3.12
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
MJE13002
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unles otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=10mA ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=0.5A; IB=0.1A
0.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=1A; IB=0.25A
TC=100℃
1.0
1.0
V
VCEsat-3
Collector-emitter saturation voltage
IC=1.5A;IB=0.5A
3.0
V
VBEsat-1
Base-emitter saturation voltage
IC=0.5A; IB=0.1A
1.0
V
VBEsat-2
Base-emitter saturation voltage
IC=1A; IB=0.25A
TC=100℃
1.2
1.1
V
ICEV
Collector cut-off current
VCEV=Rated value; VBE (off) =1.5V
TC=100℃
1.0
5.0
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
1.0
mA
hFE-1
DC current gain
IC=0.5A ; VCE=2V
8
40
hFE-2
DC current gain
IC=1A ; VCE=2V
5
25
Transition frequency
IC=0.1A ; VCE=10V;f=1MHz
4
Collector outoput capacitance
IE=0;f=0.1MHz ; VCB=10V
fT
COB
CONDITIONS
MIN
TYP.
MAX
300
UNIT
V
MHz
21
pF
Switching times resistive load
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
VCC=125V ,IC=1A
IB1=-IB2=0.2A
tp=25μs
duty cycle≤1%
2
0.05
0.1
μs
0.5
1.0
μs
2.0
4.0
μs
0.4
0.7
μs
Inchange Semiconductor
Product Specification
MJE13002
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3