Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6546 2N6547 DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ・Switching regulators ・PWM inverters and motor controls ・Solenoid and relay drivers ・Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 固 Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER D N O IC CONDITIONS M E S E 2N6546 VCBO G N A CH Collector-base voltage VEBO IN 2N6546 Collector-emitter voltage Emitter-base voltage VALUE UNIT 650 Open emitter 2N6547 VCEO R O T UC V 850 300 Open base 2N6547 V 400 Open collector 9 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 10 A IE Emitter current 25 A IEM Emitter current-peak 50 A PT Total power dissipation 175 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ Tc=25℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6546 2N6547 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6546 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 300 IC=100mA ; IB=0 V 400 2N6547 VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=2A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=3A 5.0 V Base-emitter saturation voltage IC=10A ;IB=2A 1.6 V 2N6546 VCE=650V; VBE(off)=1.5V TC=100℃ 1.0 4.0 mA 2N6547 VCE=850V ;VBE(off)=1.5V TC=100℃ 1.0 4.0 mA 1.0 mA VBEsat ICEV Collector cut-off current IEBO Emitter cut-off current VEB=9V; IC=0 hFE-1 DC current gain IC=5A ; VCE=2V DC current gain IC=10A ; VCE=2V hFE-2 导体 半 电 固 fT Transition frequency Switching times IN td Delay time tr Rise time tstg tf Storage time 60 OND IC M E ES G N A CH R O T UC 12 IC=0.5A ; VCE=10V;f=1MHz 6 30 6 IC=10A; IB1=-IB2=2.0A VCC=250V; tp=0.1ms; Duty Cycle≤2.0% Fall time 35 MHz 0.05 μs 1.0 μs 4.0 μs 0.8 μs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case 2 MAX UNIT 1.0 ℃/W Inchange Semiconductor Product Specification 2N6546 2N6547 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6546 2N6547 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4