isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE200 DESCRIPTION ·Low Collector–Emitter Saturation Voltage·DC Current Gain-Bandwidth Product ·High DC Current Gain ·Complement to MJE210 APPLICATIONS ·Designed for low voltage, low-power, high-gain audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A IB Base Current 1 A PC Collector Power Dissipation TC=25℃ 15 W Ti Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.34 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 83.4 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE200 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5 A ;IB= 50mA 0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.2A 0.75 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC=5A ;IB=1A 1.8 V VBE(sat) Base-Emitter Saturation Voltage IC=5A ;IB= 1A 2.5 V VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 1V 1.6 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 VCB= 40V; IE= 0;TC= 125℃ 0.1 0.1 μA mA IEBO Emitter Cutoff Current VEB= 8V; IC= 0 0.1 μA hFE-1 DC Current Gain IC= 0.5 A ; VCE= 1V 70 hFE-2 DC Current Gain IC= 2A ; VCE= 1V 45 hFE-3 DC Current Gain IC= 5A ; VCE=2V 10 Current-Gain—Bandwidth Product IC= 0.1 A; VCE= 10V; ftest = 10MHz 65 Collector Capacitance IE= 0; VCB= 10V; ftest = 0.1MHz fT COB isc Website：www.iscsemi.cn CONDITIONS MIN MAX 25 B B UNIT V 180 MHz 80 pF