isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE182 DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = 80 V ·DC Current Gain— : hFE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A ·Complement to Type MJE172 APPLICATIONS ·Low power audio amplifier ·Low current high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-peak 6 A IB Base Current 1 A B PC Ti Tstg Collector Power Dissipation Ta=25℃ 1.5 Collector Power Dissipation TC=25℃ 12.5 Junction Temperature 150 ℃ -65~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE182 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5 A ;IB= 50mA 0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1.5A ;IB= 0.15 A 0.9 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 3A ;IB= 0.6 A 1.7 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A 1.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 2.0 V VBE(on) Base-Emitter On Voltage VCE= 1V; IC= 0.5A 1.2 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 VCB= 100V; IE= 0;TC= 150℃ 0.1 0.1 μA mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 μA hFE-1 DC Current Gain IC= 0.1 A ; VCE= 1V 50 hFE-2 DC Current Gain IC= 0.5A ; VCE= 1V 30 hFE-3 DC Current Gain IC= 1.5 A ; VCE= 1V 12 Current-Gain—Bandwidth Product IC= 0.1 A; VCE= 10V; 50 Collector Capacitance IE= 0; VCB= 10V; ftest = 1.0MHz fT COB isc Website：www.iscsemi.cn CONDITIONS MIN MAX 80 B B UNIT V 250 MHz 40 pF INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Website：www.iscsemi.cn isc Product Specification MJE182