isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD705 DESCRIPTION ·DC Current Gain : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 45V(Min.) ·Complement to Type BD706 APPLICATIONS ·Designed for use in power linear and switching applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VBE= 0 VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE s c s .i 45 ww w UNIT 45 45 V V V 5 V IC Collector Current-Continuous 12 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @ TC=25℃ 75 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 1.67 ℃/W 70 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD705 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.0 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V 1.5 V ICEO Collector Cutoff Current VCE= 22V; IB= 0 1.0 mA ICBO Collector Cutoff Current VCB= 45V; IE= 0 VCB= 45V; IE= 0; TC= 150℃ 0.1 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-3 DC Current Gain hFE-4 fT CONDITIONS MIN 45 B B m e s isc w. w w IC= 0.5A; VCE= 2V n c . i 40 IC= 2A; VCE= 2V 30 IC= 4A; VCE= 4V 20 DC Current Gain IC= 10A; VCE= 4V 5 Current-Gain—Bandwidth Product IC= 0.3A; VCE= 3V 3 isc Website：www.iscsemi.cn 2 MAX UNIT V 400 150 MHz