isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD330 DESCRIPTION ·DC Current Gain: hFE= 85~375(Min)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage : VCEO(SUS)= -20V(Min) ·Complement to type BD329 APPLICATIONS ·Especially for battery equipped applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w -32 V -20 V -5 V IC Collector Current-Continuous -3 A IBM Base Current-Peak -1 A PC Collector Power Dissipation @ TC=25℃ 15 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 7 ℃/W 100 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD330 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on)-1 Base-Emitter On Voltage IC= -5mA; VCE= -10V VBE(on)-2 Base-Emitter On Voltage IC= -2A; VCE= -1V -1.2 V ICBO Collector Cutoff Current VCB= -32V; IE= 0 VCB= -32V; IE= 0,TC=150℃ -0.1 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 μA hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-3 DC Current Gain fT CONDITIONS Current-Gain—Bandwidth Product isc Website：www.iscsemi.cn TYP. -0.6 n c . i m e 50 IC= -0.5A; VCE= -1V 85 IC= -2A; VCE= -1V 40 2 UNIT V -0.5 IC= -5mA; VCE= -10V IC= -50mA;VCE= -5V; ftest= 100MHz MAX -20 B s c s i . w w w MIN V V 375 100 MHz