IXDA 20N120AS High Voltage IGBT IC25 = 38A =1200V VCES VCE(sat) typ= 2.4V Short Circuit SOA Capability Square RBSOA TAB 1 h 3 TAB Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = 15 V; RG = 82 W; TVJ = 125°C RBSOA, clamped inductive load; L = 100 µH tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 82 W; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions 1200 V ±20 V 38 25 A A 35 VCES A 10 µs 200 W •NPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling •TO-263 package - SMD assembly - industry standard outline Applications •drives •power supplies - switched mode power supplies - uninterruptible power supplies Characteristic Values (TVJ = 25°C, unless otherwise specified) min. VCE(sat) IC = 20 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.6 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES VCE = 0 V ; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff Inductive load; TVJ = 125°C VCE = 600 V; IC = 20 A VGE = ±15 V; RG = 82 W Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 18 A typ. max. 2.4 2.6 3.0 V V 6.5 V 0.8 mA mA 200 nA 4.5 0.8 100 75 500 70 3.1 2.4 ns ns ns ns mJ mJ 1000 70 pF nC RthJC IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 0.63 K/W 20110118a 1-5 IXDA 20N120AS Component Symbol Conditions Maximum Ratings TVJ Tstg -55...+150 -55...+125 Symbol Conditions °C °C Characteristic Values min. Weight typ. max. 2 g Dim. A Supplier Option D1 c2 A1 A A1 H D E L1 W 4 L c 2x e 3x b 3x b2 E1 IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Inches max min max 4.06 4.83 0.160 0.190 typ. 0.10 typ. 0.004 b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.029 D 8.38 9.40 0.330 0.370 D1 8.00 8.89 0.315 0.350 E 9.65 10.41 0.380 0.410 E1 6.22 8.20 0.245 0.323 e L2 1 2 3 Millimeter min 2,54 BSC 0,100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 1.02 1.68 0.040 0.066 L2 1.02 typ. 0.02 1.52 0.040 typ. 0.0008 0.060 W 0.040 0.0016 All dimensions conform with and/or are within JEDEC standard. 20110118a 2-5 IXDA 20N120AS 40 35 40 VGE = 17V 15V TJ = 25°C 35 13V 30 13V 11V 25 IC 20 IC 20 [A] 15 [A] 15 9V 10 15V 30 11V 25 VGE=17V TJ = 125°C 9V 10 5 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE [V] 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCE [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 35 VCE = 20 V 30 TJ = 25°C 25 IC [A] 20 15 10 5 0 5 6 7 8 9 10 11 12 VGE [V] Fig. 3 Typ. transfer characteristics 20 VCE = 600 V IC = 25 A 15 VGE [V] 10 5 0 0 10 20 30 40 50 60 70 80 90 QG [nC] Fig. 4 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110118a 3-5 IXDA 20N120AS 7 140 6 120 5 100 Eon 4 [mJ] 3 tr 2 Eon 0 0 [mJ] 20 t RG = 82Ω TJ = 125°C 300 [ns] 200 Eoff 1 100 tf 0 0 40 30 400 2 20 10 VCE = 600V VGE = ±15V 3 Eoff 0 10 20 Fig. 5 Typ. turn on energy and switching times versus collector current Fig. 6 Typ. turn off energy and switching times versus collector current tr 3 160 4 t Eoff [ns] [mJ] td(off) t Eoff 2 800 [ns] 1 0 50 100 150 200 250 300 0 0 350 400 tf 0 50 100 150 200 250 300 0 350 RG [Ω] RG [Ω] Fig. 7 Typ. turn on energy and switching times versus gate resistor Fig.8 Typ. turn off energy and switching times versus gate resistor 10 40 35 1200 80 Eon 0 1600 VCE = 600V VGE = ±15V IC = 20A TJ = 125°C td(on) Eon [mJ] 4 240 VCE = 600V VGE = ±15V IC = 20A TJ = 125°C 8 0 40 30 IC [A] IC [A] 12 500 td(off) 4 80 VCE = 600V t VGE = ±15V 60 [ns] RG = 82Ω TJ = 125°C 40 td(on) 1 5 TVJ= 125°C 1 30 IF = 30 A TVJ= 125°C VR = 600 V VR = 600 V 25 ICM [A] ZthJC RG = 82 Ω TJ = 125°C VCEK < VCES 20 15 [K/W] 10 0.1 0.01 0.001 single pulse 5 0 0 200 400 600 800 1000 1200 1400 VCE [V] Fig. 9 Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 t [s] Fig. 10 Typ. transient thermal impedance 20110118a 4-5