IXDA 20N120 AS VCES = 1200 V = 34 A IC25 VCE(sat) typ = 2.8 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA C Preliminary Data TO-263 AB G G E E Symbol Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1200 VCGR TJ = 25°C to 150°C; RGE = 20 kW VGES V 1200 V Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 34 A IC90 TC = 90°C 21 A ICM TC = 90°C, tp = 1 ms 42 A RBSOA VGE = ±15 V, TJ = 125°C, RG = 68 W Clamped inductive load, L = 30 µH ICM = 35 VCEK < VCES A tSC (SCSOA) VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 68 W, non repetitive 10 µs PC TC = 25°C 200 W TJ -55 ... +150 °C Tstg -55 ... +150 °C 2 g E = Emitter, G = Gate , C (TAB) = Collector Features ● ● ● ● ● ● ● ● NPT IGBT technology high switching speed low tail current no latch up short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled International standard package Advantages ● IGBT C (TAB) ● Space savings High power density Typical Applications ● Weight ● ● ● ● Symbol Conditions V(BR)CES VGE = 0 V VGE(th) IC = 0.6 mA, VCE = VGE ICES VCE = VCES AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 TJ = 25°C TJ = 125°C VCE = 0 V, VGE = ± 20 V VCE(sat) IC = 20 A, VGE = 15 V 4.5 6.5 0.8 V 0.8 mA mA ± 500 nA 2.8 3.4 V 021 IGES V © 2000 IXYS All rights reserved 1-4 IXDA 20N120 AS Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies 1000 pF 150 pF 70 pF 70 nC td(on) 60 ns tr 60 ns 400 ns Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg td(off) tf IC = 20 A, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 125°C IC = 20 A, VGE = ±15 V, VCE = 600 V, RG = 68 W 50 ns Eon 3.5 mJ Eoff 2.1 mJ RthJC © 2000 IXYS All rights reserved TO-263 AB 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side 0.63 K/W Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .315 .380 .350 E E1 e 9.65 10.29 6.22 8.13 2.54 BSC .380 .405 .245 .320 .100 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.20 .575 .090 .040 .050 0 .625 .110 .055 .070 .008 R 0.46 0.74 .018 .029 2-4 IXDA 20N120 AS 40 35 A IC 40 VGE=17V TJ = 25°C 30 VGE=17V 25 20 11V 20 15 15 9V 10 9V 10 5 5 0 0 0 1 2 3 V 0 4 1 2 3 VCE 40 40 A35 TJ = 25°C 30 IF 30 25 25 20 20 15 15 10 10 5 5 6 7 8 9 10 TJ = 125°C 0 1.0 0 5 11 V 1.5 2.0 VGE Fig. 3 Typ. transfer characteristics TJ = 25°C 2.5 VF 3.0 V Fig. 4 Typ. forward characteristics of free wheeling diode 900 30 20 V VCE = 600V IC 5 Fig. 2 Typ. output characteristics VCE = 20V 35 A V 4 VCE Fig. 1 Typ. output characteristics IC 15V 13V IC 30 11V 25 TJ = 125°C A 35 15V 13V = 25A A VGE 15 ns trr trr IRM 600 20 TJ = 125°C VR = 600V IF = 20A 10 300 10 5 IRM IXDH20N120AU1 0 0 0 10 20 30 40 50 60 70 QG Fig. 4 Typ. turn on gate charge © 2000 IXYS All rights reserved 80 nC 0 100 200 0 300 A/ms 400 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 3-4 IXDA 20N120 AS Eon 7 140 6 mJ ns 120 5 100 4 2 Eon 0 10 20 30 t 300 VCE = 600V VGE = ±15V 200 RG = 68W TJ = 125°C 100 tf 0 0 10 20 IC Fig. 5 Typ. turn on energy and switching times versus collector current Eon 8 Fig. 6 Typ. turn off energy and switching times versus collector current 4 240 VCE = 600V VGE = ±15V IC = 20A TJ = 125°C mJ td(on) 160 t 3 Eoff 1600 Eoff VCE = 600V VGE = ±15V IC = 20A TJ = 125°C mJ ns tr ns td(off) 1200 t Eon 4 2 800 1 400 80 0 0 50 100 150 200 250 300 W tf 0 0 350 0 50 100 150 RG 10 A 35 K/W 1 25 RG = 68W TJ = 125°C VCEK < VCES 20 15 10 ZthJC 0.1 0 0 200 400 600 800 1000 1200 V VCE Fig. 9 Reverse biased safe operating area RBSOA © 2000 IXYS All rights reserved 300 0 W 350 diode IGBT 0.01 0.001 5 250 Fig. 8 Typ. turn off energy and switching times versus gate resistor 40 30 200 RG Fig. 7 Typ. turn on energy and switching times versus gate resistor ICM 0 40 A 30 IC 12 400 1 0 40 A 4 2 20 0 ns Eoff 3 VCE = 600V VGE = ±15V 60 RG = 68W TJ = 125°C 40 tr 1 t Eoff 500 td(off) mJ 80 td(on) 3 5 single pulse 0.0001 0.00001 0.0001 IXDH20N120AU1 0.001 0.01 0.1 s 1 t Fig. 10 Typ. transient thermal impedance 4-4