VID 160-12P1 VIO 160-12P1 VDI 160-12P1 IC25 = 169 A = 1200 V VCES VCE(sat) typ. = 2.9 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VIO VDI AC1 IJK IK10 VID X15 SV18 L9 S X16 X15 L9 T16 IK10 X16 AC1 LMN NTC F1 B3 PS18 A NTC Pin arangement see outlines Features Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES 1200 V ± 20 V IC25 IC80 TC = 25°C TC = 80°C 169 117 A A ICM VCEK VGE = ±15 V; RG = 6.8 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH 200 VCES A tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 6.8 Ω; TVJ = 125°C non-repetitive 10 µs Ptot TC = 25°C 694 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 160 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 4 mA; VGE = VCE ICES VCE = VCES; IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff 2.9 3.3 4.5 VGE = 0 V; TVJ = 25°C TVJ = 125°C Inductive load, TVJ = 125°C VCE = 600 V; IC = 100 A VGE = 15/0 V; RG = 6.8 Ω Cies VCE = 25 V; VGE = 0 V; f = 1 MHz RthJC RthJH (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 3.5 V 6.5 V 6 19 mA mA 400 nA 100 60 600 90 16.1 14.6 ns ns ns ns mJ mJ 6.5 nF 0.36 0.18 K/W K/W • NPT IGBT's - positive temperature coefficient of saturation voltage - fast switching • FRED diodes - fast reverse recovery - low forward voltage • Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate Advantages • space and weight savings • reduced protection circuits • leads with expansion bend for stress relief Typical Applications • AC and DC motor control • AC servo and robot drives • power supplies • welding inverters 303 IGBTs 1-4 VID 160-12P1 VIO 160-12P1 VDI 160-12P1 VIO Reverse diodes (FRED) Symbol Conditions IF25 IF80 TC = 25°C TC = 80°C 154 97 Symbol Conditions Characteristic Values min. typ. max. VF IF = 100 A; TVJ = 25°C TVJ = 125°C 2.3 1.7 IRM trr IF = 75 A; diF/dt = 750 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 79 220 A ns 0.9 0.45 K/W K/W RthJC RthJH Maximum Ratings with heatsink compound (0.42 K/m.K; 50 µm) A A 2.7 V V B3 Temperature Sensor NTC Symbol R25 B25/50 Conditions Characteristic Values min. typ. max. T = 25°C 4.75 5.0 3375 VDI 5.25 kΩ K Module Symbol Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+150 °C °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md mounting torque (M4) a Max. allowable acceleration 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s2 Symbol Conditions dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Characteristic Values min. typ. max. 11.2 11.2 Weight VID mm mm 24 g IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 303 Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. 2-4 VID 160-12P1 VIO 160-12P1 VDI 160-12P1 250 250 TJ = 25°C A 200 15V 13V IC 150 TJ = 125°C A VGE=17V VGE=17V 200 15V IC 13V 150 11V 11V 100 100 9V 9V 50 0 0,0 50 156T120 0,5 1,0 1,5 2,0 0,0 3,0 V 2,5 156T120 0 0,5 1,0 1,5 2,0 2,5 VCE 3,0 3,5 V VCE Fig. 1 Typ. output characteristics B3 Fig. 2 Typ. output characteristics 300 250 VCE = 20V A TJ = 125°C TJ = 25°C 200 A 250 TJ = 25°C IF IC 200 150 150 100 100 50 50 156T120 0 5 6 7 8 9 10 156T120 0 0,5 11 V 1,0 1,5 2,0 3,5 VF Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 20 300 120 VCE = 600V IC = 100A V VGE 3,0 V 2,5 VGE A ns IRM 15 trr trr 200 80 10 40 IRM 5 0 100 200 300 400 500 nC QG Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 100 156T120 0 0 200 400 600 800 A/µs 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 303 156T120 0 TJ = 125°C VR = 600V IF = 100A 3-4 VID 160-12P1 VIO 160-12P1 VDI 160-12P1 40 mJ Eon 120 40 ns mJ td(on) 30 90 Eon tr 20 t 10 20 RG = 6.8Ω 30 TJ = 125°C 10 156T120 0 0 50 100 150 ns td(off) Eoff 30 60 VCE = 600V VGE = ±15V 800 156T120 50 100 150 IC IC Fig. 7 Typ. turn on energy and switching times versus collector current 50 Eon VCE = 600V VGE = ±15V IC = 100A TJ = 125°C mJ 40 Eon td(on) tr 30 tf 0 200 A B3 Fig. 8 Typ. turn off energy and switching times versus collector current 25 300 ns mJ 240 20 t td(off) VCE = 600V VGE = ±15V IC = 100A TJ = 125°C Eoff 1500 ns 1200 Eoff t 180 15 900 20 120 10 600 10 60 5 300 0 0 156T120 0 0 8 16 24 32 48 Ω 56 40 156T120 0 8 16 24 RG 32 40 tf 0 48 Ω 56 RG Fig. 9 Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor 240 1 A K/W 0,1 200 ICM 400 RG = 6.8Ω 200 TJ = 125°C 0 200 A t VCE = 600V VGE = ±15V 0 0 600 Eoff ZthJC 160 120 diode 0,01 RG = 6.8Ω TJ = 125°C VCEK < VCES IGBT 0,001 80 156T120 0 0 200 400 600 800 1000 1200 V VCE Fig. 11 Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved single pulse 0,00001 0,00001 0,0001 VDI...160-12P1 0,001 0,01 0,1 s 1 t Fig. 12 Typ. transient thermal impedance 303 0,0001 40 4-4