IXFV52N30P IXFV52N30PS IXFH52N30P PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A Ω 66mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300 V VGSS Continuous ± 20 V VGSM Transient ± 30 V ID25 TC = 25°C 52 A IDM TC = 25°C, pulse width limited by TJM 150 A IA TC = 25°C 52 A EAS TC = 25°C 1 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 400 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ = = ≤ ≤ TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. FC Mounting force (PLUS220) 11..65/2.5..14.6 N/lb. Weight PLUS220 & PLUS220SMD TO-247 4 6 g g G D S D (TAB) PLUS220SMD (IXFV_S) G S D (TAB) TO-247 (IXFH) D (TAB) G = Gate S = Source D = Drain TAB = Drain Features Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 300 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION, All rights reserved V 5.0 V ± 100 nA 25 μA 1 mA z z z z International standard packages Fast recovery diode Avalanche rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density 66 mΩ DS99197F(05/08) IXFH52N30P IXFV52N30P IXFV52N30PS Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 20 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 52A RG = 4Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 30 S 3490 pF 550 pF 130 pF 24 ns 22 ns 60 ns 20 ns 110 nC 25 nC 53 nC 0.31 °C/W RthJC RthCS (TO-247, PLUS220) 0.25 Source-Drain Diode TJ = 25°C unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM PLUS220 (IXFV) Outline °C/W Characteristic Values Min. Typ. Max. 52 A Repetitive, pulse width limited by TJM 150 A IF = IS, VGS = 0V, Note 1 1.5 V IF = 25A, -di/dt = 100A/μs VR = 100V, VGS = 0V 160 200 ns 800 nC 7 A TO-247 (IXFH) Outline ∅P Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PLUS220SMD (IXFV_S) Outline e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH52N30P IXFV52N30P IXFV52N30PS Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 150 55 VGS = 10V 8V 50 45 VGS = 10V 9V 125 7V 35 I D - Amperes I D - Amperes 40 30 25 6V 20 100 8V 75 7V 50 15 10 5V 5 5V 0 0 0.0 0.5 1.0 1.5 2.0 VD S 2.5 3.0 3.5 4.0 4.5 5.0 0 4 8 12 VD - Volts Fig. 3. Output Characteristics @ 125ºC 16 S 20 24 28 - Volts Fig. 4. RDS(on) Normalized to I D = 26A Value vs. Junction Temperature 3.2 55 VGS = 10V 8V 50 R D S (on) - Normalized 40 7V 35 30 25 6V 20 15 5V 10 VGS = 10V 2.8 45 I D - Amperes 6V 25 2.4 2.0 ID = 52A ID = 26A 1.6 1.2 0.8 5 0.4 0 0 1 2 3 4 5 VD S 6 7 8 9 -50 10 -25 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to I D = 26A Value vs. Drain Current 60 3.8 VGS = 10V 3.4 50 TJ = 125ºC 3.0 I D - Amperes R D S (on) - Normalized 0 - Volts 2.6 2.2 1.8 40 30 20 TJ = 25ºC 1.4 10 1.0 0.6 0 0 25 50 I 75 D 100 - Amperes © 2008 IXYS CORPORATION, All rights reserved 125 150 -50 -25 0 25 50 75 100 T C - Degrees Centigrade IXFH52N30P IXFV52N30P IXFV52N30PS Fig. 8. Transconductance Fig. 7. Input Admittance 100 60 90 55 50 80 45 70 60 50 TJ = 125ºC 25ºC -40ºC 40 30 25ºC 40 g f s - Siemens I D - Amperes TJ = - 40ºC 35 125ºC 30 25 20 15 20 10 10 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 10 20 30 40 V G S - Volts I Fig. 9. Source Current vs. Source-To-Drain Voltage 50 60 70 80 90 100 - Amperes Fig. 10. Gate Charge 160 10 140 9 VDS = 150V ID = 26A IG = 10m A 8 120 7 100 VG S - Volts I S - Amperes D 80 60 6 5 4 3 TJ = 125ºC 40 2 TJ = 25ºC 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 1.4 10 20 30 40 50 60 70 80 90 V S D - Volts Q G - nanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 10000 f = 1MHz TJ = 25ºC TJ = 150ºC Single Pulse C iss 1000 I D - Amperes R DS(on) Lim it Capacitance - pF 10 11 12 0 0 0 C oss 100 25µs 1m s 10ms 10 100ms DC C rss 100 1 0 5 10 15 VD 20 S 25 30 35 40 - Volts 10 100 VD S 1000 - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_52N30P(6S)3-14-06-C IXFH52N30P IXFV52N30P IXFV52N30PS Fig. 13. Maximum Transient Thermal Impedance 0.10 Z (t h ) J C - (ºC /W ) 1.00 0.01 1 10 100 1000 Pulse Width - milliseconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_52N30P(6S)3-14-06-C